GaN is a semiconductor material produced through the process of metal-organic chemical vapor deposition. It is composed of a wurtzite crystal structure that combines gallium and nitrogen. The two elements are typically sourced from trimethylgallium or ammonia. During the process, the two metals are vaporized and combined, forming the semiconductor crystal. Along with to LEDs, GaN is also used in lasers and microscopes.
The benefits of GaN Semiconductor are well-known. Its high-frequency switching capability, which makes it ideal for switching high-frequency data, and low-voltage operation make it a popular choice in electronic devices. Its low switching losses are also an appealing feature, as they allow the reduction of large components without sacrificing performance. The next challenge for GaN will be the automotive industry. While it outperforms reliable silicon, the automotive market demands a high level of quality. The use of this semiconductor is expected to increase in the coming years.
High-performance GaN transistors are a key advantage of GaN-on-SiC technology. They can achieve up to 650 V and have an on-resistance of 25 microh. Moreover, they can achieve 10MHz switching frequencies. Besides their superior switching characteristics, GaN transistors have lower on-resistance than other semiconductors. These advantages make them attractive for use in next-generation power systems.
High-frequency GaNsemiconductor can be made into a variety of designs. Currently, the HMC1087 die, for example, is a GaN chip transistor MMIC power amplifier. The HMC1087 die offers better than 12 dB of saturated output power, and offers 44% power-added efficiency throughout the full frequency range. These devices are compact enough to fit inside a small package. The advantages of GaN Semiconductor are numerous.Along with the LED and RF components, GaN is used in light-emitting diodes. It also creates the blue light seen in Blu-ray players. Its radiation-hardened transistors are also used in satellites. The tiny physical die size of GaN makes it a preferred semiconductor in this field. By 2021, GaN microwave transistors are expected to be used in the Earth Explorer Biomass satellite providing global maps of carbon stored in forests. In September 2021, Infineon Technologies AG entered into an agreementwith Panasonic Corporation for joint production and development of the second gen (Gen2) of gallium nitride (GaN) technologyto offer higher efficiency and power density levels.
